| 1. | The corrosion rate of porous silicon in hf / h2o2 solution is several orders higher than that of bulk silicon
多孔硅在hf / h _ 2o _ 2溶液中的腐蚀速率比体硅的高几个数量级。 |
| 2. | Bulk silicon , with indirect band gap of 1 . 12 ev , does n ' t emit visible light at room temperature
本体硅为间接禁带半导体，且禁带宽度比较窄( 1 . 12ev ) ，在室温下很难发可见光。 |
| 3. | The mechanism of the luminescence has been discussed . bulk silicon , with indirect band gap of 1 . 12ev does n ' t emit light at room temperature
本体硅为间接禁带半导体，且禁带宽度较窄，室温下很难发光。 |
| 4. | With a broaden and likely direct band gap , porous silicon has a different band structure to that of the bulk silicon . thus the porous silicon can emit at room temperature
多孔硅改变了体硅的能带结构，使禁带展宽，并由间接带隙向直接带隙转变，实现了室温发光。 |
| 5. | With a broad and likely direct band gap , porous silicon has a different band structure from that of the bulk silicon . thus the porous silicon can emit visible light at room temperature
多孔硅改变了本体硅的能带结构，使禁带宽度展宽，并由间接禁带向直接禁带转变，实现了室温发光。 |
| 6. | A method to make blazed silicon gratings is designed . the fabrication of ( 100 ) and ( 111 ) silicon wafer grating is performed by bulk silicon techniques . the surfaces of silicon gratings have been tested by afm
设计了一种制作闪耀硅光栅的方法，利用体硅加工技术分别进行了( 100 )面硅片和( 111 )面硅片光栅的制作，对光栅的表面进行了测试。 |
| 7. | The micromechanical comb - capacitive accelerometers fabricated by bulk silicon micromachining process are widely used for having simple process , small temperature coefficient , good stability and easily controllable damping coefficient
用体硅微机械工艺制作的梳齿电容式传感器有制作工艺简单、温度系数小、稳定性好、阻尼系数容易控制等优点，因而应用广泛。 |
| 8. | In the dissertation , a micromechanical comb capacitive accelerometer having u - shaped supporting beams is designed , simulated and fabricated on the base of the anodic bonding between the silicon and glass , and bulk silicon micromachining process
而改用体硅微机械制作可以改善这些问题。本文设计、模拟并制作了一种基于硅一玻璃键合工艺的u型梁支撑的微机械电容式加速度计。 |
| 9. | The different kinds of pyroelectric sensors were prepared on the porous silicon dioxide , plastic film and bulk silicon substrates respectively . the nanocomposite pclttp ( vdf - trfe ) film was deposited by spin - coating used as the sensing film , and ni - cr film was chosen as upper electrode and absorb layer
分别在多孔氧化硅、 pet塑料和硅衬底上，制备纳米陶瓷/ p ( vdf - trfe )复合敏感膜的热释电单元传感器。 |
| 10. | In the new structure , a n + buffer layer is introduced into the bulk silicon substrate with a triple - diffusion process . . the new structure has two features : one is the feature of npt - igbt : the thin and lightly - doped p + layer and the high lifetimes of the carriers ; the other is the feature of pt - igbt : n7n + structure which can make the n " region very thin
新结构用三重扩散的方法在n ~ -单晶片上引入了n ~ +缓冲层，仍然保留了npt - igbt中薄而轻掺杂p层和高载流子寿命的本质优点，同时又具有pt - igbt中n ~ - ( n ~ + )双层复合的薄耐压层(即薄基区)的优点。 |
